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Field Ion Microscopy (FIM)

Field Ion Microscopy (FIM)

●Features The Field Ion Microscope (FIM) is a projection-type microscope that allows for easy observation of the surface atomic images of sharply pointed metal tips. It was invented in 1951 by Professor Erwin E. Mueller at Pennsylvania State University. This device operates in an ultra-high vacuum environment, gradually increasing the voltage applied to a metal tip (probe) set as the sample, which causes the FIM image to appear on a screen, allowing for the visual observation of the surface atomic irregularities of the needle-like sample magnified approximately one million times. Simultaneously, the application of voltage to the tip provides a cleaning effect that removes impurities adhering to the surface of the tip. Furthermore, by increasing the voltage applied to the tip, field evaporation can be induced, allowing individual atoms to be stripped away and enabling precise adjustment of the number of atoms at the tip. The excellent characteristics of this device are utilized not only for atomic-level observation of metals but also for tip evaluation in scanning tunneling microscopy, where a sharp metal tip is essential. It has a wide range of applications and is adopted in many research laboratories and university research facilities.

  • Analytical Equipment and Devices
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  • Other laboratory equipment and containers

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[SIM] Scanning Ion Microscopy Method

Observation of SIM images is possible with high resolution (accelerating voltage 30kV: 4nm).

- SIM imaging observation is possible with high resolution (accelerating voltage 30kV: 4nm). - Compared to SEM images, SIM images provide information about the extreme surface layer. - Observation of metal crystal grains is possible (e.g., Al, Cu). - The resolution is inferior to SEM images (SIM: 4nm, SEM: 0.5nm). ■Features of MST-owned equipment - Compatible with JEIDA standard wafers with a maximum sample size of 300mm in diameter. - Continuous cross-sectional SIM imaging acquisition is possible in combination with FIB (Focused Ion Beam) processing (Slice & View).

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  • Contract Analysis
  • Contract measurement
  • Contract Inspection

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[Analysis Case] Observation of Crystal Grains on Cu Surface Using Scanning Ion Microscopy

It is possible to obtain insights into the size and distribution of crystal grains in metallic polycrystals.

The Scanning Ion Microscope (SIM) is a method that irradiates a solid sample with an ion beam and detects the secondary electrons generated. Since secondary electrons produce contrast according to the crystal orientation of each grain, it is possible to easily obtain insights into the size and distribution of crystal grains in polycrystalline metals such as Cu and Al using SIM. This document presents an example of measurements where the surface of Cu was observed using SIM.

  • Contract Analysis
  • Memory

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